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LBS14101 AT6021 U6030A TAA4762A AD7871JN N5VD54C 2SK26 M66700
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  Datasheet File OCR Text:
 Diodes
DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227
Switching diode
DAN222M / DAN222 / DAN202U / DAN202K DAP222M / DAP222 / DAP202U / DAP202K DA227
Application Ultra high speed switching External dimensions (Unit : mm)
DAN222M / DAP222M DAN222 / DAP222
Features 1) Four types of packaging are available. 2) High speed. (trr=1.5ns Typ.) 3) Suitable for high packing density layout. 4) High reliability.
0.40.4
0.20.1 0.80.1 0.20.1 1.20.1
0.80.1 0.220.05
(2) (1)
0.50.05 00.1
+0.1 0.2 - 0.05
1.6+0.2 - 1.0+0.1 -
0.5 0.5
+0.1 0.2 -0.05
0.8 + 0.1 - 1.6 + 0.2 -
0.7 + 0.1 - 0.55 + 0.1 - 00.1
(3)
0.320.05 1.20.1
0.130.05
+0.1 0.3 -0.05
0.15 + 0.05 -
(All pins have the same dimensions)
ROHM : VMD3 EIAJ : JEDEC :
ROHM : EMD3 EIAJ : SC - 75 JEDEC : SOT - 416
Construction Silicon epitaxial planar
DAN202U / DAP202U
DAN202K / DAP202K
+ 2.0 - 0.2 + 1.3 - 0.1
+ 0.9 - 0.1
2.9 + 0.2 - 1.9 + 0.2 - 0.95 0.95 0.6
1.6 +0.2 -0.1 2.8 + 0.2 -
1.1 +0.2 -0.1 0.8 + 0.1 -
Marking
DAN222M DAN222 DAN202U DAN202K DAP222M DAP222 DAP202U DAP202K
(3)
0.65
0.65
0.3
+ 1.25 - 0.1
N
+ 2.1 - 0.1
(1)
(4)
00.1
+ 0.3 - 0.1
0.1Min.
(2) (3) + 0.15 - 0.05
(All pins have the same dimensions)
(All pins have the same dimensions)
P
(2)
ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT - 323
DA227
+ 1.25-0.1
ROHM : SMD3 EIAJ : SC - 59 JEDEC : SOT - 346
DA227
(4)
N20
(1)
0.6
+ 0.3-0.1
0.65
+ 0.2-0.1 + 0.9-0.1
0.7
(1)
(4)
+ 1.25- 0.1 + 2.1- 0.1
00.1
(2) + 0.2-0.1
(3) + 0.2 - 0.1
+ 0.15- 0.05
0.1Min.
0.65 0.65
+ 1.3-0.1 + 2.0-0.2
ROHM : UMD4 EIAJ : SC - 82 JEDEC : SOT - 343
0.30.6
+ 0.1 0.4 - 0.05
+0.1 0.15 -0.06
0.1Min.
00.1
1/3
Diodes
DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227
Circuits
(1) (4)
(2)
(3)
DAN202K DAN202U DAN222 DAN222M
DAP202K DAP202U DAP222 DAP222M
DA227
Absolute maximum ratings (Ta=25C)
Type DAN202K DAP202K DAN202U DAP202U DAN222 DAP222 DAN222M DAP222M DA227
Junction Storage Peak reverse DC reverse Peak forward Mean rectifying Surge current Power dissipation temperature temperature voltage voltage current current (1s) (TOTAL) Tj (C) Tstg (C) VRM (V) VR (V) IFM (mA) IO (mA) Isurge (A) Pd(mW)
80 80 80 80 80 80 80 80 80 80 80 80 80 80 80 80 80 80 300 300 300 300 300 300 300 300 300 100 100 100 100 100 100 100 100 100 4 4 4 4 4 4 4 4 4 200 200 200 200 150 150 150 150 150 150 150 150 150 150 150 100 100 150
P/N Type N P N P N P N P N
-55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150
Electrical characteristics (Ta=25C)
Forward voltage Type VF (V) Max. 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 Cond. IF (mA) 100 100 100 100 100 100 100 100 100 Reverse current IR (A) Max. 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 Cond. VR (V) 70 70 70 70 70 70 70 70 70 Capacitance between terminals CT (pF) Max. 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 Cond. VR (V) 6 6 6 6 6 6 6 6 6 f (MHz) 1 1 1 1 1 1 1 1 1 Reverse recovery time trr (ns) Max. 4 4 4 4 4 4 4 4 4 Cond. VR (V) 6 6 6 6 6 6 6 6 6 IF (mA) 5 5 5 5 5 5 5 5 5
DAN202K DAP202K DAN202U DAP202U DAN222 DAP222 DAN222M DAP222M DA227
2/3
Diodes
DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227
Electrical characteristic curves (Ta=25C)
POWER DISSIPATION : Pd / Pd Max.(%)
125
50
1000
Ta=100C
FORWARD CURRENT : IF (mA)
100
REVERSE CURRENT : IR (nA)
20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Ta=85C 50C 25C 0C -30C
100
75C
75
10
50C 25C
50
1
0C -25C
25
0.1
0 0
25
50
75
100
125
150
0.01 0
10
20
30
40
50
AMBIENT TEMPERATURE :Ta (C)
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
Fig.1 Power attenuation curve
Fig.2 Forward characteristics (P Type)
Fig.3 Reverse characteristics (P Type)
1000
FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (nA)
20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Ta=85C 50C 25C 0C -30C
Ta=100C 75C 50C
CAPACITANCE BETWEEN TERMINALS : CT (pF)
50
f=1MHz 4
100
10
25C 0C -25C
1
2
P Type
0.1
N Type
0.01 0
10
20
30
40
50
60
70
80
0 0
2
4
6
8
10 12 14 16 18 20
FORWARD VOLTAGE : VF
(V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig.4 Forward characteristics (N Type)
Fig.5 Reverse characteristics (N Type)
0.01F
Fig.6 Capacitance between terminals characteristics
10
(ns)
D.U.T.
9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7
VR=6V
REVERSE RECOVERY TIME : trr
5 PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE
P Typ
e
INPUT
N Type
8
9
10
100ns
FORWARD CURRENT : IF
(mA)
Fig.7 Reverse recovery time
OUTPUT
trr 0
Fig.8 Reverse recovery time (trr) measurement circuit
0.1IR
IR
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0


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